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PT60QHx45
PT60QHx45
Pulse Power Thyristor Switch Preliminary Information
Replaces February 2000 version, DS5267-1.3 DS5267-1.4 April 2000
APPLICATIONS
q q q
Pulse Power Crowbars Ignitron Replacement
KEY PARAMETERS 4500V VDRM IT(AV) 1000A ITSM 22500A dI/dt 10,000A/s
FEATURES
q q q
Double Side Cooling Fast Turn-on Low Turn-on Losses
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM /VRRM V 4500/16 Conditions
PT60QHx45
Tvj = 0 to 125C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms Outline type code: H. See Package Details for further information.
Lower voltage grades available.
Fig.1 Package outline
CURRENT RATINGS
Symbol Double Side Cooled IT(AV) IT(RMS) Mean on-state current RMS value Half wave resistive load, Tcase = 80oC Tcase = 80oC 1000 1570 A A Parameter Conditions Max. Units
1/6
PT60QHx45
SURGE RATINGS
Symbol ITSM I2t ITSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current I2t for fusing Conditions 10ms half sine; Tcase = 125oC VR = 50% VRRM - 1/4 sine 10ms half sine; Tcase = 125oC VR = 0 Max. 17.8 15.8 x 106 22.5 2.52 x 106 Units kA A2s kA A2s
THERMAL AND MECHANICAL DATA
Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink Conditions Double side cooled Clamping force 19.5kN with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) Tstg Storage temperature range Clamping force -55 18 125 125 22
o
Min. dc Double side -
Max. 0.013 0.003
Units
o
C/W C/W
o
o
-
135
C
C C
o
kN
DYNAMIC CHARACTERISTICS
Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Rate of rise of on-state current Conditions At VRRM/VDRM, Tcase = 125oC To 67% VDRM Tj = 125oC. Rgk 1.5 From 67% VDRM to 40kA Gate source 60A tr = 1.5s to 1A, Tj = 25oC At Tvj = 125oC At Tvj = 125oC Non-repetitive Typ. Max. 100 175 10000 Units mA V/s A/s
VT(TO) rT
Threshold voltage On-state slope resistance
-
1.5 0.67
V m
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT 2/6 Parameter Gate trigger voltage Gate trigger current Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC Typ. Max. 1.0 3 Units V A
PT60QHx45
ORDERING INFORMATION
PT 40Q P x 45 Pulse Power Thyristor Device type Package outline type code lead length (see table, right) Voltage x100 O C D E F G H J K L Lead length (x) No lead 8" 10" 12" 16" 18" 20" 24" 30" 40" 200mm 250mm 300mm 400mm 450mm 500mm 600mm 750mm 1000mm
CURVES
5000 Measured under pulse conditions
1 2
4000
Instantaneous on-state current, IT - (A)
1: Tj = 25C Max 2: Tj = 125C Max 3000
2000
1000
0 1.0
2.0 3.0 4.0 Instantaneous on-state voltage, VT - (V)
5.0
Fig.2 Maximum (limit) on-state characteristics 3/6
PT60QHx45
0.1
Thermal impedance - (C/W)
0.01
Double side cooled
0.001
Conduction
d.c. Halfwave 3 phase 120 6 phase 60 0.0001 0.001 0.01 0.1 Time - (s) 1
Effective thermal resistance Junction to case C/W Double side 0.0130 0.0141 0.0170 0.0200 10 100
Fig.3 Maximum (limit) transient thermal impedance - junction to case
4/6
PT60QHx45
Package Details
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2 holes O3.60 0.05 x 2.0 0.1 deep (One in each electrode)
Cathode Aux. Tube
Gate Tube
15
52 O100 O62.85
Anode
9.6 O62.85 55
Cathode
Nominal weight: 820g Clamping force: 20kN 10%
Package outine type code: H
26 0.5
5/6
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020
(c) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
www.dynexsemi.com

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